Connecting member between wiring films, manufacturing method thereof, and manufacturing method of multilayer wiring substrate

ABSTRACT

A connecting member between wiring films is provided in which: a normal copper foil, which is a general-purpose component and not expensive, or the like can be used as a material; formation of bumps is sufficiently achieved by conducting etching one time; and a necessary number of layers can be laminated and pressed collectively at a time. Bumps, which are formed approximately in a cone-shape, for connecting wiring films of a multilayer wiring substrate are embedded in a second resin film that serves as an interlayer insulating film.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a connecting member between wiringfilms, a manufacturing method thereof, and a manufacturing method of amultilayer wiring substrate, and specifically, to a connecting memberbetween wiring films, a manufacturing method thereof, and amanufacturing method of a multilayer wiring substrate which arepreferably applied to the case where the connecting between wiring filmsof the multilayer wiring substrate is performed by using a bump made ofcopper, for example.

2. Description of the Related Art

As one of the methods of performing the connecting between wiring filmsof a multilayer wiring substrate, there is a method of using a bump madeof copper, for example. The method will be simply described withreference to FIG. 26.

A. First, a multilayer metal plate 1 is prepared as shown in FIG. 26(A).The multilayer metal plate 1 is formed by laminating a wiring filmforming metal layer 4 that is made of copper foil having a thickness of,for example, 18 μm, through an etching stopping layer 3 that is made ofnickel having a thickness of, for example, 1 μm, on one of principalsurfaces of a bump forming metal layer 2 that is made of copper foilhaving a thickness of, for example, 100 μm.

B. The bump forming metal layer 2 of the multilayer metal plate 1 issubjected to selective etching to form bumps 2 a for connecting betweenthe wiring films, as shown in FIG. 26(B).

C. When the etching treatment is completed, as shown in FIG. 26(C), anetching treatment with respect to the etching stopping layer 3 isconducted by using copper as a mask, copper being used in forming thebumps 2 a and the wiring film forming metal layer 4.

D. An insulating film 5 made of, for example, thermosetting resin isthen bonded to the formed surface of the bump 2 a so as to expose thetop portion of the bump 2 a, as shown in FIG. 26(D).

E. Thereafter, a wiring film forming metal thin plate 6 made of, forexample, copper is provided so as to face a surface of the multilayermetal plate 1 from which the top portion of the bump 2 a is projected,as shown in FIG. 26(E).

F. The wiring film forming metal thin plate 6 is connected to the bump 2a to be laminated on the formed surface side of the bump 2 a, as shownin FIG. 26(F).

G. The wiring film forming metal layer 4 of the multilayer metal plate 1and the wiring film forming metal thin plate 6 are subjected topatterning treatment by selective etching, to thereby form wiring films4 a and 6 a. Thus, a multilayer wiring substrate 7 is completed as shownin FIG. 26(G). The wiring films 4 a become the wiring films of the upperlayer, and the wiring films 6 a become the wiring films of the lowerlayer. When the number of layers is further increased, a wiringsubstrate in the state shown in FIG. 26(D) is laminated on themultilayer wiring substrate 7, for example.

In the above-described conventional technique, the multilayer metalplate 1 is employed. As described above, the multilayer metal plate 1has the three-layer structure made of, for example, a copper layer, anickel layer and a copper layer. The multilayer metal plate 1 is not ageneral-purpose component such as a simple copper foil but a custom-madecomponent. Therefore, the unit price is expensive.

Also, in the above-described conventional technique, the bumps 2 a areformed by first etching, and the removal of the etching stopping layer 3is performed by second etching. Thus, it is necessary that the differentkinds of etching are performed at least twice. Therefore, the number ofsteps for the processes is increased, and the etching material cost isalso increased since different materials are used for selective etching.

In the above-described conventional technique, when the number of thelayers is increased, it is necessary to repeat the steps of, forexample, forming the wiring films 4 a on the wiring film forming metallayer 4 by etching, to laminate the wiring substrate in the state shownin FIG. 26(D) thereon; and forming the next wiring films 4 a on thewiring film forming metal layer 4 by etching, to laminate the nextwiring substrate in the state shown in FIG. 26(D) thereon. Therefore, itis impossible to stack a desired number of layers at a time to pressthem collectively.

Also, in the above-described conventional technique, etching resistpatterns 8 corresponding to the bumps are formed on the bump formingmetal layer 2 and the etching is conducted by using the patterns 8 asthe masks, to thereby form the bumps 2 a, as shown in FIG. 27. However,in this case, the diameter of each of the etching resist patterns 8 isnot allowed to be set to a value equal to or smaller than a given valuein relation to the depth of the etching. Also, it is necessary toprovide gaps G having the distance equal to or larger than a given valuebetween the etching resist patterns 8. Therefore, the pitch of theetching resist pattern 8, in other words, the pitch of the bump 2 a, isnot allowed to be set to a value smaller than a given value. Forexample, when the metal layer has a thickness of 0.1 mm, the pitch has alimitation of 0.4 mmP (Here, foot portion of the bump has a diameter of0.15 mm.).

In the above-described conventional technique, the wiring film formingmetal layer 4 is necessary to have the thickness capable of resistingthe conveyance with a conveyor in order to support the bumps 2 a to beformed. The metal layer 4 having an extremely thin thickness causeswrinkles, scars, and breaks in the process, and thus, can not besubstantially adopted. The step that adopts the semi-additive processthat enables minuteness compared with a subtracting process isconvenient as long as metal foils with a thickness of about 3 to 5 μmcan be used on both sides of the insulating film 5. However, with theabove reason, it is difficult to form the wiring layers with a thicknessof about 3 to 5 μm.

Also, in the above-described conventional technique, when the bump 2 ais heightened, the diameter of a so-called foot portion of the bump 2 ais also inevitably increased. Therefore, in the state where the bump 2 ais heightened, it is impossible to set a pitch of the bump 2 a to avalue equal to or smaller than a certain degree.

SUMMARY OF THE INVENTION

The present invention has been made to solve the above-described defectsin the conventional technique and has an object to provide a connectingmember between wiring films, a manufacturing method thereof, and amanufacturing method of a multilayer wiring substrate, in which anecessary number of layers can be laminated and pressed collectively ata time, bumps can be arranged with a pitch smaller than the limitationpitch of an etching resist pattern, fine wiring patterns can be formedby a semi-additive process on both sides of an insulating film, or afine pitch can be maintained even when a bump is heightened.

According to a first aspect of the present invention, there is provideda connecting member between wiring films, characterized in that aplurality of bumps, which are made of copper or copper alloy and areformed approximately in a cone-shape, for connecting wiring films of amultilayer wiring substrate are embedded in an insulating film such thatat least one ends of the bumps are projected therefrom.

According to a second aspect of the present invention, in the firstaspect of the invention, there is provided the connecting member betweenwiring films, characterized in that the insulating film is comprised ofa resin layer with a three-layer structure in which thermo-compressionbonding resin is provided to both surfaces of a core member made ofresin.

According to a third aspect of the present invention, there is provideda method of manufacturing a connecting member between wiring films,characterized by comprising:

laminating a carrier layer on a bump forming metal layer;

forming resist patterns to an opposite surface of the bump forming metallayer to the surface on which the carrier layer is laminated;

performing etching to the bump forming metal layer with the resistpatterns serving as a mask to form a first member in which a pluralityof bumps, which are formed approximately in a cone-shape, are projectedfrom the carrier layer;

laminating an insulating film on the first member so as to make topportions of the bumps be exposed from the insulating film to form asecond member; and

removing the carrier layer from the second member to form a connectingmember between wiring films in which the bumps formed approximately in acone-shape are embedded in the insulating film such that at least oneends of the bumps are projected therefrom.

According to a fourth aspect of the present invention, there is provideda method of manufacturing a multilayer wiring substrate, characterizedby comprising:

arranging copper foils that serve as wiring films above and under aconnecting member between wiring films having a plurality of bumps whichare formed approximately in a cone-shape and which are embedded in aninsulating film such that at least one ends of the bumps are projectedtherefrom; and

integrating the insulating film and the copper foils through thermalpressing.

According to a fifth aspect of the present invention, there is providedthe method of manufacturing a multilayer wiring substrate, characterizedby comprising:

arranging members in which a metal foil is previously attached to acarrier layer and predetermined patterning is conducted thereto aboveand under a connecting member between wiring films having a plurality ofbumps which are formed approximately in a cone-shape and which areembedded in an insulating film such that at least one ends of the bumpsare projected therefrom; and

integrating the insulating film, the bumps, the carrier layer, and themetal foil through thermal pressing.

According to a sixth aspect of the present invention, there is providedthe method of manufacturing a multilayer wiring substrate, characterizedby comprising connecting wiring films of a double-sided wiring substrateor multilayer wiring substrate with wiring films of other double-sidedwiring substrate or multilayer wiring substrate by a plurality of bumpswhich are formed approximately in a cone-shape and which are embedded inan insulating film such that at least one ends of the bumps areprojected therefrom.

According to a seventh aspect of the present invention, there isprovided the method of manufacturing a multilayer wiring substrate,characterized by comprising:

preparing a member in which a plurality of bumps formed approximately ina cone-shape are formed on one of principal surfaces of a carrier layer;

laminating an insulating film for interlayer insulation on the one ofprincipal surfaces of the carrier layer so as to make the insulatingfilm be penetrated with the bumps;

laminating a wiring film forming metal foil on an opposite surface ofthe insulating film to the carrier layer;

removing the carrier layer; and

laminating other wiring film forming metal foil, which is different fromthe wiring film forming metal foil, on the surface of the insulatingfilm from which the carrier layer is removed to integrate the bumps, theinsulating film, and the two wiring film forming metal foils.

According to an eighth aspect of the present invention, there isprovided a method of manufacturing a multilayer wiring substrate,characterized by comprising:

preparing a member in which a plurality of bumps formed approximately ina cone-shape are formed on one of principal surfaces of a carrier layerthat serves as an interlayer insulating film;

obtaining a state where the bumps penetrate the carrier layer; and

laminating wiring film forming metal foils on both surfaces of thecarrier layer to integrate the carrier, the bumps, and the two wiringfilm forming metal foils.

According to a ninth aspect of the present invention, there is providedthe method of manufacturing a multilayer wiring substrate, characterizedby comprising:

preparing a member in which a plurality of bumps are formed on one ofprincipal surfaces of a wiring film forming metal foil and other memberin which an insulating film for interlayer insulation is laminated onone of principal surfaces of other wiring film forming metal foil and aplurality of bump corresponding holes are formed in the insulating filmso as to correspond to the plurality of bumps; and

performing alignment and lamination of the two members so as to make therespective bumps of the member correspond to the respective bumpcorresponding holes of the other member to integrate the bumps, theinsulating film, and the two wiring film forming metal foils.

According to a tenth aspect of the present invention, there is providedthe method of manufacturing a multilayer wiring substrate, characterizedby comprising:

preparing a member in which a plurality of bumps are formed on one ofprincipal surfaces of a mold and other member in which other mold islaminated on one of principal surfaces of an insulating film forinterlayer insulation and bump corresponding holes are formed on theother mold so as to correspond to the bumps;

facing the insulating film of the other member toward the surface of themember formed with the bumps on the side on which the bumps are formedso as to align the bump corresponding holes and the corresponding bumpswith each other in position;

pressurizing the two molds so as to make the insulating film bepenetrated with the bumps; and

removing the two molds and then laminating wiring film forming metalfoils on both the surfaces of the insulating film to integrate theinsulating film, the bumps, and the two wiring film forming metal foils.

According to an eleventh aspect of the present invention, in the tenthaspect of the invention, there is provided the method of manufacturing amultilayer wiring substrate, characterized in that:

the mold adhered with a resin film with adhesive by the adhesive on itsopposite surface to the insulating film is used as the mold formed withthe bump corresponding holes; and

a pressurizing force is applied to the two molds so as to make theinsulating film be penetrated with the bumps, and then, in removing thetwo molds, the mold having the bump corresponding holes is removedthrough the adhesive by peeling the resin film.

According to a twelfth aspect of the present invention, there isprovided the method of manufacturing a multilayer wiring substrate,characterized by comprising:

performing half etching from one of principal surfaces of a bump formingmetal foil to form a plurality of half bumps;

laminating an insulating film for interlayer insulation on the one ofprincipal surfaces of the bump forming metal foil so as to make theinsulating film be penetrated with the half bumps;

laminating a wiring film forming metal foil connected with the halfbumps on a surface of the insulating film;

performing half etching from the other principal surface of the bumpforming metal foil to form other half bumps that are integrated with thehalf bumps to constitute bumps;

laminating other insulating film for interlayer insulation on the otherprincipal surface of the bump forming metal foil so as to make the otherinsulating film be penetrated with the other half bumps; and

laminating other wiring film forming metal foil connected with the otherhalf bumps on a surface of the other insulating film.

According to a thirteenth aspect of the present invention, there isprovided the method of manufacturing a multilayer wiring substrate,characterized by comprising:

arranging above and under a wiring substrate comprised of a double-sidedwiring substrate or multilayer wiring substrate connecting membersbetween wiring films in which a plurality of bumps, which are formedapproximately in a cone-shape, are embedded in an insulating film suchthat at least one ends of the bumps are projected therefrom; and

arranging copper foils on an upper side of the upper connecting memberbetween wiring films and on a lower side of the lower connecting memberbetween wiring films and conducting pressing for their integration toconnect wiring films of the wiring substrate comprised of thedouble-sided wiring substrate or multilayer wiring substrate with thecopper foils.

According to a fourteenth aspect of the present invention, there isprovided the method of manufacturing a connecting member between wiringfilms, characterized by comprising:

laminating a carrier layer on a bump forming metal layer;

forming resist patterns to an opposite surface of the bump forming metallayer to the surface on which the carrier layer is laminated;

conducting etching to the bump forming metal layer with the resistpatterns serving as a mask to form a first member in which a pluralityof bumps, which are formed approximately in a cone-shape, are projectedfrom the carrier layer;

laminating an insulating film on the first member so as to make topportions of the bumps be exposed from the insulating film to form asecond member;

removing the carrier layer from the second member to form a connectingmember between wiring films;

laminating other carrier layer different from the carrier layer on otherbump forming metal layer different from the bump forming metal layer;

forming other resist patterns different from the resist patterns to anopposite surface of the other bump forming metal layer to the surface onwhich the other carrier layer is laminated;

conducting etching to the other bump forming metal layer with the otherresist patterns serving as a mask to form other first member in which aplurality of bumps, which are formed approximately in a cone-shape, areprojected from the other carrier layer;

laminating the other first member and the connecting member betweenwiring films so as to make top portions of the bumps of the other firstmember be exposed from the insulating film of the connecting memberbetween wiring films to form other second member different from thesecond member; and

removing the other carrier layer from the other second member to form anew connecting member between wiring films in which bumps formedapproximately in a cone-shape are embedded in an insulating film.

According to a fifteenth aspect of the present invention, there isprovided the method of manufacturing a multilayer wiring substrate,characterized by comprising:

forming a conductive film to a connecting member between wiring films inwhich bumps formed approximately in a cone-shape are embedded in aninsulating film;

forming wiring patterns on the conductive film through plating; and

removing the conductive film through quick etching.

According to a sixteenth aspect of the present invention, there isprovided the connecting member between wiring films, characterized inthat a plurality of members, in which bumps formed approximately in acone-shape are embedded in an insulating film, are laminated such thatrespective bumps are overlapped with one another.

BRIEF DESCRIPTION OF THE DRAWINGS

In the accompanying drawings:

FIGS. 1(A) to 1(H) show Embodiment 1 of the present invention, beingsectional views showing a method of manufacturing a multilayer wiringsubstrate in order of manufacturing step, with FIG. 1(F′) showing amodification example of FIG. 1(F);

FIGS. 2(A) to 2(C) are sectional views showing an example of a method oflaminating a second resin film that is an insulating film and a firstmember according to Embodiment 1 above in order of manufacturing step;

FIGS. 3(A) to 3(C) are sectional views showing an example of the methodof manufacturing a connecting member between wiring films shown in FIG.1(F′) in order of manufacturing step;

FIGS. 4(A) to 4(C) are sectional views showing another example of themethod of manufacturing a connecting member between wiring films shownin FIG. 1(F′) in order of manufacturing step;

FIGS. 5(A) to 5(C) show a modification example of Embodiment 1, beingsectional views showing a method of manufacturing a wiring substrate inorder of manufacturing step;

FIG. 6 is a sectional view showing an example of the step of laminatinga wiring film forming copper foil on a connecting member between wiringfilms;

FIGS. 7(A) to 7(E) show Embodiment 2 of the present invention, beingsectional views showing a method of manufacturing a wiring substrate inorder of manufacturing step;

FIGS. 8(A) to 8(D) show Embodiment 3 of the present invention, beingsectional views showing a method of manufacturing a wiring substrate inorder of manufacturing step;

FIGS. 9(A) to 9(E) show Embodiment 4 of the present invention, beingsectional views showing a method of manufacturing a wiring substrate inorder of manufacturing step;

FIGS. 10(A) to 10(G) show Embodiment 5 of the present invention, beingsectional views showing a method of manufacturing a wiring substrate inorder of manufacturing step;

FIGS. 11(A) to 11(E) are sectional views showing a main portion of amodification example of the manufacturing method shown in FIGS. 10(A) to10(G) in order of manufacturing step;

FIGS. 12(A) to 12(E) show Embodiment 6 of the present invention, beingsectional views showing a method of manufacturing a wiring substrate inorder of manufacturing step;

FIGS. 13(A) to 13(C) show Embodiment 7 of the present invention, beingsectional views showing a method of manufacturing a wiring substrate inorder of manufacturing step;

FIG. 14 shows a modification example of the embodiment shown in FIGS.13(A) to 13(C), being a sectional view showing an example of theconnecting member between wiring films on which bumps are alternatelylaminated such that a direction of one bump is opposite to that of theadjacent bump;

FIGS. 15(A) and 15(B) show Embodiment 8 of the present invention, beingsectional views showing a method of manufacturing a wiring substrate inorder of manufacturing step;

FIGS. 16(A) to 16(E) show Embodiment 9 of the present invention, beingsectional views showing a method of manufacturing a wiring substrate inorder of manufacturing step;

FIGS. 17(A) and 17(B) show an example of the method of laminating alarge number of the wiring substrates manufactured by the method shownin FIGS. 16(A) to 16(E), thereby manufacturing a high integratedmultilayer wiring substrate;

FIGS. 18(A) to 18(E) show Embodiment 10 of the present invention, beingsectional views showing a method of manufacturing a wiring substrate inorder of manufacturing step;

FIGS. 19(A) and 19(B) show an example of the method of laminating alarge number of the wiring substrates manufactured by the method shownin FIGS. 16(A) to 16(E), thereby manufacturing a high integratedmultilayer wiring substrate;

FIGS. 20(A) to 20(D) show Embodiment 11 of the present invention, beingsectional views showing a method of manufacturing a multilayer wiringsubstrate in order of manufacturing step;

FIGS. 21(A) and 21(B) show Embodiment 12 of the present invention, beingsectional views showing a method of manufacturing a multilayer wiringsubstrate in order of manufacturing step;

FIGS. 22(A) to 22(D) show Embodiment 12 of the present invention, beingsectional views showing a method of manufacturing a multilayer wiringsubstrate in order of manufacturing step;

FIG. 23 shows Embodiment 13 of the present invention, being a sectionalview showing the method of manufacturing a multilayer wiring substratein order of manufacturing step;

FIGS. 24(A) to 24(D) show Embodiment 14 of the present invention, beingsectional views showing a method of manufacturing a multilayer wiringsubstrate in order of manufacturing step;

FIGS. 25(A) to 25(C) show Embodiment 15 of the present invention, beingsectional views showing a method of manufacturing a multilayer wiringsubstrate in order of manufacturing step;

FIGS. 26(A) to 26(G) are sectional views showing a conventional methodof manufacturing a multilayer wiring substrate in order of manufacturingstep; and

FIG. 27 is a sectional view showing an example of limitation of a pitchof a bump.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The present invention will be specifically described below withreference to embodiments shown in the accompanying drawings.

1) Embodiment 1

FIGS. 1(A) to 1(H) show Embodiment 1, being sectional views showing amethod of manufacturing a multilayer wiring substrate in order ofmanufacturing step.

A. First, a first resin film 13 that serves as a carrier layer islaminated (adhered) to a copper foil 12 that serves as a bump formingmetal layer through an adhesive or direct cladding (FIG. 1(A)).

The thickness of the copper foil 12 is arbitrarily set and determined inaccordance with the height of a bump 14 to be formed. For example, thethickness is set to 100 μm. Incidentally, for example, a metal foil thatis made of aluminum or the like may be laminated as the carrier layer tothe copper foil 12 instead of the first resin film 13.

B. Etching resist patterns 16 that are used for forming bumps are formedon one surface of two surfaces of the copper foil 12, on the othersurface of which the first resin film 13 is laminated (FIG. 1(B)).

C. The copper foil 12 is then subjected to etching by using the etchingresist patterns 16 as masks. Thus, there is formed a first member 17 inwhich the bumps 14 formed approximately in a cone-shape are provided onthe first resin film 13 so as to be projected therefrom (FIG. 1(C)). Thesize of the bump 14 is arbitrarily set, but when a height thereof is setto 100 μm, it is determined, for example, that a top portion thereof hasa diameter of 100 μm and a foot portion thereof has a diameter of 150μm.

D. A second resin film 18 that serves as an insulating filmcorresponding to an insulating film of the wiring substrate is thenabutted against the first member 17 from the side where the bumps 14 areprojected (FIG. 1(D)). The thickness of the second resin film 18 is alsoarbitrarily set but, for example, it is set to 50 μm. Examples of thepreferable materials include thermoplastic resin such as liquid crystalpolymer, poly(etheretherketone) resin, poly(ethersulfone) resin,poly(phenylene sulfide) resin, fluorine resin, polyimide resin, andepoxy prepreg in the state of B-stage of thermosetting resin.

E. The first member 17 is laminated on the second resin film 18 so thatthe top portions of the bumps 14 are exposed, to thereby form a secondmember 19 (FIG. 1(E)).

Note that, the lamination of the second resin film 18 to the firstmember 17 is specifically performed by the procedure shown in FIGS. 2(A)to 2(C), for example. That is, the second resin film 18 is first abuttedagainst the first member 17 from the side where the bumps 14 areprojected (FIG. 2(A)). Then, the second resin film 18 is scraped by asharpening stone 21 (FIG. 2(B)). Accordingly, the resin corresponding tothe top portions of the bumps 14 is polished and removed. The topportions of the bumps 14 go into the second resin film 18, and then, ina short period of time, break through the second resin film 18, tothereby obtain the state in which the top portions of the bumps 14 areexposed from the second resin film 18. Incidentally, a polishing rolleror the like may also be employed instead of the sharpening stone 21.

F. Subsequently, when the bumps go into the resin film 18 and aremaintained, the first resin film 13 is separated from the second member19 (FIG. 1(F)). Thus, there is formed a connecting member between wiringfilms 22 in which the bumps 14 formed approximately in a cone-shape areprovided so as to be embedded in the second resin film 18 that serves asthe insulating film.

Note that, in addition to the connecting member between wiring films 22shown in FIG. 1(F), that is, the connecting member between wiring films22 in which the foot portions (base portions) of the bumps 14 formedapproximately in a cone-shape are projected out the second resin film,there may also be obtained the connecting member between wiring films 22shown in FIG. 1(F′), that is, the connecting member between wiring films22 in which the top portions of the bumps 14 are projected out thesecond resin film 18.

FIGS. 3(A) to 3(C) show a method of obtaining the connecting memberbetween wiring films 22 shown in FIG. 1(F′). Specifically, the stateshown in FIG. 3(A) (same as in FIG. 1(C)) is provided, then an elasticsheet, for example, a sheet 70 made of polyethylene, polypropylene,paper, polyvinylidene chloride, or rubber is disposed on the secondresin film 18, and the entire surface is pressed, to thereby obtain thestate shown in FIG. 3(B). Then, the sheet 70 and the first resin film 13are removed, with the result that the state shown in FIG. 3(C) isprovided. Accordingly, the connecting member between wiring films 22shown in FIG. 1(F′) can be obtained.

Also, by employing the resin film 18 in which holes are bored in advanceat predetermined positions by a boring method with a drill, punching, ora laser beam, the connecting member between wiring films 22 shown inFIG. 1(F′) may also be obtained. FIGS. 4(A) to 4(C) show a method ofobtaining the above connecting member between wiring films 22.

That is, the second resin film 18 having no hole is prepared in thesteps shown in FIG. 1(D) and FIG. 2. However, in this method, there isprepared the second resin film 18 in which a hole 71 having at least adiameter smaller than the diameter of the base portion (foot portion) ofthe bump 14 is formed at the position corresponding to the bump 14, asshown in FIG. 4(A).

Thereafter, the alignment of the second resin film 18 is conducted onthe first resin film 13 on which the bumps 14 are formed so as to makeeach hole 71 correspond to each bump 14, and the integration is attainedby room-temperature compression bonding or thermo-compression bonding.FIG. 4(B) shows the state after the integration.

Thereafter, the separation of the first resin film 13 is conducted asshown in FIG. 4(C). By such a method as well, the connecting memberbetween wiring films 22 shown in FIG. 1(F′) can be obtained.

The description will be continued from the step G following the stepshown in FIG. 1(F).

G. Two wiring film forming copper foils 23 are abutted against bothsides of the connecting member between wiring films 22 (FIG. 1(G)).

H. The wiring film forming copper foils 23 and the connecting memberbetween wiring films 22 are then pressed at a temperature of 300° C. orhigher, for example, in the case of liquid crystal polymer (FIG. 1(H)).Thus, the wiring film forming copper foils 23 and the bumps 14 similarlymade of copper are firmly bonded to each other due to the use of thesame kind of metal (Cu—Cu bonding), to thereby realize a satisfactoryconductivity state.

MODIFICATION EXAMPLE

FIGS. 5(A) to 5(C) show a modification example of Embodiment 1, beingsectional views showing a method of manufacturing a wiring substrate inorder of manufacturing step.

A. First, as shown in FIG. 5(A), a resin film 18 a with a three-layerstructure is prepared. The resin film 18 a is formed by bonding, to bothsides of a polyimide film 18 ₁ that serves as a core, polyimide films 18₂ which are made of thermoplastic polyimide, epoxy denaturedthermosetting adhesive, or the like and can be subjected tothermo-compression bonding.

One of points of this modification example which is different fromEmbodiment 1 showing the manufacturing method in FIGS. 1(A) to 1(H) isthat the resin film 18 a with a three-layer structure is used instead ofthe second resin film 18 that serves as the interlayer insulating film.

B. Next, as shown in FIG. 5(B), a member 17 a in which the bumps 14 areformed on one of principal surfaces of the wiring film forming copperfoil 23 is laminated on one of principal surfaces of the resin film 18 asuch that the bumps 14 penetrate the resin film 18 a with a three-layerstructure, and thermo-compression bonding is conducted thereto.

Note that the member 17 a is formed by a method of, for example,laminating a copper foil for forming bumps on a resin film, performingselective etching to the copper foil, pressurizing and laminating awiring film forming copper foil on the opposite surface to the resinfilm, and then, removing the resin film.

C. Next, as shown in FIG. 5(C), other wiring film forming copper foil 23is laminated on the opposite surface of the resin film 18 a to thesurface on which the wiring film forming copper foil 23 is laminated,and thermo-compression bonding is conducted thereto. Then, a wiringsubstrate 11′ in this modification example is obtained.

As described above, the wiring substrate 11 shown in FIGS. 1(A) to 1(H)provides the wiring substrate 11′ as a modification example as shown inFIG. 5(C).

Note that, when the pressing is performed with respect to the wiringfilm forming copper foils 23, the connecting member between wiring films22, and the like, the pressing may be conducted by passing them throughtwo high-temperature rollers 24 as shown in FIG. 6, for example. Thus,the pressing is successively-performed, and it is possible to enhancethe production efficiency.

Thereafter, the wiring film forming copper foils 23 are subjected toetching as in the conventional technique, to thereby form the necessarywiring patterns (not shown, the like of the multilayer wiring substratein the conventional technique shown in FIG. 26(G)).

Of course, the connecting member between wiring films 22 shown in FIG.1(F′) may be employed instead of the connecting member between wiringfilms 22 shown in FIG. 1(F) in the steps shown in FIGS. 1(G) and 1(H).

The rollers shown in FIG. 6 can also be used for the modificationexample shown in FIGS. 5(A) to 5(C) and various laminate layersdescribed below.

2) Embodiment 2

FIGS. 7(A) to 7(E) show Embodiment 2 according to the present invention,being sectional views showing a method of manufacturing a wiringsubstrate in order of manufacturing step.

A. The first member 17 shown in FIG. 1(C) is formed by the method shownin FIGS. 1(A) to 1(C). Reference numeral 13 denotes a first resin film,reference numeral 14 denotes bumps formed approximately in a cone-shape,which are provided so as to be projected from the first resin film 13.

Here, the method shown in FIGS. 1(A) to 1(C) is simply described. Thefirst resin film 13 that serves as the carrier layer is laminated on(adhered to) the copper foil 12 that serves as the bump forming metallayer, and the etching resist patterns 16 that are used for forming thebumps are formed on one surface of the two surfaces of the copper foil12, on the other surface of which the first resin film 13 is laminated.The copper foil 12 is then subjected to the etching by using the etchingresist patterns 16 as masks.

Thus, the first member 17 that is shown in FIG. 7(A) (FIG. 1(C)) isobtained.

B. Next, a second resin film 18 that serves as an insulating filmcorresponding to an insulating film of a wiring substrate is abuttedagainst the first member 17 from the side from which the bumps 14 areprojected, and the first member 17 is laminated on the second resin film18 such that the top portions of the bumps 14 are exposed, to therebyform a second member 19. FIG. 7(B) shows the state after the formationof the second member 19.

In this case, the second resin film 18 is laminated so as to be bondedto the first resin film 13. This can be easily attained by, for example,the above method shown in FIGS. 4(A) and 4(B).

C. Next, a wiring film forming copper foil 23 a is attached to theopposite side of the second member 19 to the side on which the firstresin film 13 is provided, and is pressed to the resin film 13 to belaminated. FIG. 7(C) shows the state after the lamination.

D. Then, as shown in FIG. 7(D), the first resin film 13 is separated.

E. Thereafter, a wiring film forming copper foil 23 b is attached to thesurface from which the resin film 13 is separated, and in this state,the copper foil 23 b is pressed to be laminated on the second member 19.Then, as shown in FIG. 7(E), there is obtained a multilayer wiringsubstrate 11 a in Embodiment 2.

As described above, the wiring film forming copper foil 23 a is pressedonly to the opposite side to the resin film 13 without removing theresin film 13 with respect to the second member 19, then, the resin film13 is removed, and thereafter, the second wiring film forming copperfoil 23 b is pressed to the surface from which the resin film 13 isremoved. The reason for this is that variation of the forming positionof the bumps 14 can be reduced more compared with the case where thewiring film forming copper foils 23 and 23 are pressed to be laminatedto both the sides of the member, as in Embodiment 1 shown in FIG. 1.

That is, as in Embodiment 1 shown in FIG. 1, when the two copper foils23 are pressed to the member from both the sides at a time to beintegrated with the member, the positional relationship between thebumps 14 at the time of pressing is held only by the second resin film18. Thus, slight deviation is caused by an impactive pressure applied atthe time of pressing, which leads to slight variation in the formationposition of the bumps 14. Therefore, in the case where the positionalprecision of the bumps 14 is required to be considerably high, therequest maybe difficult to meet with.

However, as in Embodiment 2 shown in FIG. 7, when the two copper foils23 a and 23 b are laminated to the member by conducting differentpressing processes twice, the mutual positional relationship of thebumps 14 can be regulated by the first resin film 13 and the secondresin film 18 in the first lamination. Thus, the deviation of the mutualpositional relationship between the bumps 14 can be made extremelysmall.

Then, the lamination with pressing of the copper foil 23 b is conductedin the state where the mutual positional relationship between the bumps14 is regulated by the copper foil 23 a, and thus, the wiring substrate11 a can be formed while high precision on the positional relationshipis maintained. Therefore, in the case where the mutual positionalprecision between the bumps 14 needs to be extremely high even if thenumber of steps is increased, the wiring substrate may be manufacturedby the manufacturing method shown in FIG. 7. On the other hand, in thecase where there is a strong request for reduction in not only thenumber of manufacturing steps but also manufacturing cost while decentpositional precision is sufficient, the wiring substrate may bemanufactured by the manufacturing method shown in FIG. 1.

3) Embodiment 3

FIGS. 8(A) to 8(D) show Embodiment 3 of the present invention, beingsectional views showing a method of manufacturing a wiring substrate inorder of manufacturing step.

A. A first member 17 shown in FIG. 8(A) is formed by the same method asshown in FIGS. 1(A) to 1(C). Reference numeral 13 denotes a resin film,and reference numeral 14 denotes bumps made of copper. Incidentally, theresin film 13 plays a part of a base in the formation of the bumps 14 atthe beginning and further plays a part of an interlayer insulating filmin a later stage, and thus, is not removed.

B. Next, a not-shown cushion member is provided below the resin film 13,and a pressure is applied thereto, whereby the bumps 14 are made topenetrate the resin film 13. FIG. 8(B) shows the state where the resinfilm 13 is penetrated with the bumps 14. Thus, the resin film 13 can beused as the interlayer insulating film.

Note that preferable materials for the cushion member includegas-forming materials, for example, expandable polypropylene andexpandable urethane, thick paper, a rubber sheet, and the like.

C. Next, as shown in FIG. 8(C), two wiring film forming copper foils 23are abutted against both sides of a connecting member between wiringfilms 22.

D. Thereafter, the wiring film forming copper foils 23 and theconnecting member between wiring films 22 are pressed at a hightemperature. Thus, a wiring substrate 11 b shown in FIG. 8(D) isobtained. The wiring substrate 11 b in Embodiment 3 is different fromthe above-described wiring substrates 11 and 11 a in that the resin film13 used as the base in the formation of the bumps 14 is used as theinterlayer insulating film without being removed after the formation ofthe bumps 14. Therefore, a waste of the resin film 13 can be avoided,and further, reduction of the material cost can be attained.

4) Embodiment 4

FIGS. 9(A) to 9(E) show Embodiment 4 according to the present invention,being sectional views showing a method of manufacturing a wiringsubstrate in order of manufacturing step.

A. A one-side copper finishing laminate plate in which a resin film 18(made of polyimide or LCP, for example) that serves as an interlayerinsulating film is laminated on a wiring film forming copper foil 23 isprepared, and a protective film 13 is attached to the opposite surfaceof the resin film 18 that serves as the interlayer insulating film ofthe laminate sheet with respect to the surface on which the copper foil23 is laminated. FIG. 9(A) shows the state after the attachment of theprotective film 13. Here, the protective film 13 is attached in order toprevent attack or surface dirt due to desmear processing conductedlater.

Note that polyimide resin is used for the resin film 18 on the wiringfilm forming copper foil 23, and further, there may be used for theresin film 18 polyimide that can be applied to thermo-compressionbonding, such as thermoplastic polyimide or epoxy denaturedthermosetting adhesive. In this example, the protective film 13 isformed by thermo-compression bonding.

B. Next, bump corresponding holes are selectively formed in theprotective film 13 and the resin film 18 by using a laser beam. Denotedby 18 h are the bump corresponding holes, into which bumps are insertedand fit later. Thereafter, desmear processing is performed thereto.Specifically, after the holes are opened by using the laser beam,organic matter that remains on the surface of the copper foil 23 that isexposed as the inner bottom surface of each of the bump correspondingholes 18 h is removed by using, for example, a potassium permanganatesolution. Further, dry desmear processing may be conducted with the useof ozone, plasma, sandblast, liquid forming, or the like. FIG. 9(B)shows the state after the opening of the holes and the desmearprocessing.

Note that, instead of the opening of the holes with the laser beam, theopening of the holes may be selectively performed by exposure anddeveloping by using a resin film imparted with photosensitivity as theresin film 18, to thereby form the bump corresponding holes 18 h.

C. Next, as shown in FIG. 9(C), the protective film 13 is removed.

D. Then, a member 17 a in which bumps 14 are formed on one of principalsurfaces of a wiring film forming copper foil 23 is prepared, and thealignment of the member 17 a is conducted such that the bumps 14correspond to the bump corresponding holes 18 h of the lamination body(lamination body in which the resin film 18 is laminated on the copperfoil 23), with the result that the member 17 a faces the hole formationsurface of the lamination body. FIG. 9(D) shows the state in which themember 17 a faces the lamination body.

E. Thereafter, the member 17 a is pressed and laminated to thelamination body. Thus, there is obtained a wiring substrate 11 c havingthe resin film 18 as the interlayer insulating film and having the bumps14 positioned to the bump corresponding holes 18 h. FIG. 9(E) shows thewiring substrate 11 c.

The wiring substrate can also be obtained with the above-mentionedmethod. In accordance with the method, the bump corresponding holes 18 hare formed in the resin film 18 so as to correspond to the bumps 14.Thus, there can be reduced the contamination due to waste and foreignmatters which derive from the resin film 18 and which are generated whenthe bumps 14 are pushed into the resin film 18 to be inserted and fitthereinto.

Note that the member 17 a can be obtained as follows. That is, themember 17 formed in accordance with the method shown in FIGS. 1(A) to1(C) is prepared; the bumps 14 are fit into the bump corresponding holes18 h; then, before the pressing of the resin film 13 (refer to the firstresin film 13 in FIGS. 1(A) to 1(C)), the resin film 13 is peeled; thewiring film forming copper foil 23 is superimposed thereon; andthereafter, the pressing of the copper foil 23 is performed.

Further, the bump corresponding holes 18 h may be formed as follows.That is, a film made of photoresist is used as the protective film 13 inFIG. 9(A); the protective film is subjected to patterning throughexposure and developing; and the resin film 18 is subjected to etchingwith the patterned protective film 13 as a mask.

Further, in Embodiment 4, porous polyimide resin (manufactured by NittoDenko Corporation, for example) may be used for the resin film 18. Thisis because perforating property of the polyimide resin with respect tothe bumps 14 is satisfactory because of the porousness, and thus,contamination and the like are not developed. In other words, asdescribed above, in the case of ordinary resin that is not porous, theresin film 18 is difficult to be penetrated with the bumps 14, and theresin film is distorted, which leads to the generation of waste andforeign matters which serve as a contamination source. Thus, cleaningprocessing is required as described above. However, when the penetratingproperty is satisfactory, slight contamination develops, and thus,cleaning processing is performed with ease or not required.Incidentally, porous resin such as porous polyimide resin includesclosed-cell type and opened-cell type. The closed-cell type has atendency to exhibit the better penetrating property and produce lesscontamination and the like.

5) Embodiment 5

FIGS. 10(A) to 10(G) show Embodiment 5 according to the presentinvention, being sectional views showing a method of manufacturing awiring substrate in order of manufacturing step.

A. First, as shown in FIG. 10(A), a lamination body is prepared in whichan upper mold 80 is laminated on a resin film 18 that serves as aninterlayer insulating film. The upper mold 80 is formed of metal (forexample, SUS or the like) or resin, and has bump corresponding holes 82that correspond to bumps 14 described later. Note that the bumpcorresponding holes 82 can be formed as follows. That is, photoresist isapplied to the upper mold 80 adhered to the resin film 18; thephotoresist is subjected to patterning through exposure and developingto be a mask film; and the upper mold 80 is subjected to etching withthe mask film made of the photoresist as a mask. The formation of thebump corresponding holes 82 in the upper mold 80 may be conducted in thestage where the upper mold 80 has not been adhered to the resin film 18.

B. Next, as shown in FIG. 10(B), a member 17 b is prepared in which thebumps 14 are formed on a lower mold 84 formed of metal (for example, SUSor the like) or resin. The alignment of the upper mold 80 is performedwith the resin film 18 facing downward such that the bump correspondingholes 82 correspond to the bumps 14, with the result that the upper mold80 faces the formation surface of the bumps 14 in the member 17 b.

C. Next, as shown in FIG. 10(C), the upper mold 80 is pressurized to thelower mold 84 side, thereby obtaining the state where the resin film 18is penetrated with the bumps 14.

D. Then, as shown in FIG. 10(D), the upper mold 80 is removed. Notethat, the penetration causes the generation of waste and foreign mattersand the like, that derive from resin, which leads to the contaminationof the surface of the resin film 18. Thus, cleaning is preferablyperformed after the completion of this pressing step.

E. Next, as shown in FIG. 10(E), the lower mold 84 is removed.

F. Then, as shown in FIG. 10(F), wiring film forming copper foils 23 aremade to face both sides of the resin film 18 penetrated with the bumps14.

G. Thereafter, the wiring film forming copper foils 23 are pressed andlaminated to the resin film 18. Thus, a wiring substrate 11 d iscompleted.

Note that, in Embodiment 5 as well as in Embodiment 4, porous polyimideresin (manufactured by Nitto Denko, for example) may be used for theresin film 18.

MODIFICATION EXAMPLE

FIGS. 11(A) to 11(E) are sectional views showing a main portion of amodification example of the manufacturing method shown in FIG. 10 inorder of manufacturing step.

A. First, as shown in FIG. 11(A), there is prepared one in which anupper mold 80 a is formed on the resin film 18 that serves as theinterlayer insulating film. The upper mold 80 a is the same as one inthe case of the manufacturing method shown in FIG. 10 in that it isformed of metal (for example, SUS) or resin, but employs one thinnerthan the one in that case. Specifically, there is used an upper moldsubstantially having a thickness obtained by subtracting the thicknessof the resin film 18 from the height of the bump 14.

B. Next, as shown in FIG. 11(B), bump corresponding holes 82 a areformed in the upper mold 80 a so as to correspond to the bumps 14. Themanufacturing method of the bump corresponding holes 82 a may be thesame as that shown in FIG. 10.

C. Next, a film 86 with adhesive 90 is adhered to the upper mold 80 a.Reference numeral 88 denotes a main body of the film 86, and referencenumeral 90 denotes adhesive. The film 86 with adhesive 90 reduces thecontamination with waste and foreign matters that derive from the resin,which is caused by penetration of the bumps 14 in the resin film 18 inthe later step.

The alignment of the film 86 with adhesive 90 and the upper mold 80 aand the resin film 18 which are adhered thereto is performed such thatthe bump corresponding holes 82 a correspond to the bumps 14, with theresult that the film 86 with adhesive 90, the upper mold 80 a, and theresin film 18 face the formation surface of the bumps 14 of the member17 b (in which the bumps 14 are formed on one of principal surfaces ofthe lower mold 84: refer to FIG. 10(B)) FIG. 11(C) shows the state wherethe film with adhesive 86, the upper mold 80 a, and the resin film 18face the formation surface.

D. Next, the upper mold 80 a is pressed to the lower mold 84, therebyobtaining the state where the resin film 18 is penetrated with the bumps14. FIG. 11(D) shows the state. Note that, it can be said tentativelythat waste and foreign matters and the like that derive from resin aregenerated due to the penetration.

E. Subsequently, the film 86 with adhesive 90 is removed together withthe upper mold 80 a adhered to the film 86 by the adhesive 90. Then, thewaste and foreign matters and the like of resin which are generatedthrough the penetration are removed together with the film 86 withadhesive 90 and the upper mold 80 a, with the result that thecontamination of the wiring substrate due to the waste and foreignmatters and the like, which derive from the resin, is almost eliminated.FIG. 11(E) shows the state after the removal of the film 86 withadhesive 90 and the upper mold 80 a.

Thereafter, the wiring substrate 11 d is obtained by the same method asshown in FIGS. 10(E) to 10(G).

In accordance with the above-mentioned manufacturing method, thecontamination of the wiring substrate due to the waste and foreignmatters and the like, which derive from the resin, is almost eliminatedas described above. In view of this point, it can be said that themethod is more excellent than that shown in FIG. 10.

Note that, in this modification example as well, porous polyimide resin(manufactured by Nitto Denko, for example) may be used for the resinfilm 18 that serves as the interlayer insulating film in order to reducecontamination more.

6) Embodiment 6

FIGS. 12(A) to 12(E) show Embodiment 6 according to the presentinvention, being sectional views showing a method of manufacturing awiring substrate in order of manufacturing step. In Embodiment 6, theheight of the bump is increased, for example, to twice or more that inEmbodiment 5 shown in FIG. 10 and in the modification example thereofshown in FIG. 11.

A. First, as shown in FIG. 12(A), a bump forming copper foil 110 that isappropriately thicker (for example, 150 μm) than the thickness of thebump to be formed (for example, 100 μm) is prepared.

B. Next, as shown in FIG. 12(B), selective half etching (for example,etching with a thickness of 75 μm) is performed to one of principalsurfaces of the bump forming copper foil 110, thereby forming half bumps14 a.

C. Then, a resin film 112 that serves as an interlayer insulating filmis laminated on the formation surface of the half bumps 14 a of the bumpforming copper foil 110 so as to be penetrated with the half bumps 14 a.Further, a wiring film forming copper foil 114 is pressed to the resinfilm 112 and the formation surface of the half bumps 14 a to beintegrated therewith. FIG. 12(C) shows the state after the integrationwith pressing.

D. Next, the bump forming copper foil 110 is subjected to selective halfetching (etching with a thickness of 75 μm) from the other surface(opposite surface to the formation surface of the half bumps 14 a),thereby forming half bumps 14 b that are integrated with the half bumps14 a to constitute bumps 14. FIG. 12(D) shows the state after theformation of the half bumps 14 b.

E. Another resin film 112 that serves as an interlayer insulating filmis laminated on the formation surface of the half bumps 14 b of the bumpforming copper foil 110 so as to be penetrated with the half bumps 14 b.Further, another wiring film forming copper foil 114 is pressed to theresin film 112 and the formation surface of the half bumps 14 b to beintegrated therewith. FIG. 12(E) shows the state after the integrationwith pressing.

A wiring substrate 11 h obtained through the above process can have itsbumps 14 heightened without being limited in vain as to heightening ofthe arrangement density. That is, there may be a case where there isrequired the wiring substrate having the bumps 14 as low bumps with aheight of about 50 μm, or a case where there is required the wiringsubstrate having the bumps 14 higher bumps with a height of, forexample, about 100 μm. The wiring substrate with high bumps can beformed by conducting selective etching to a thick copper foil as abase.However, selective etching generally involves side etching, and theamount of side etching is proportional to the depth of etching.Therefore, as the wiring substrate with higher bumps is to be obtained,the amount of side etching becomes larger. In addition, the integrationdensity becomes lower.

However, the half bumps 14 a and 14 b are formed by performing halfetching from both the surfaces of the thick bump forming copper foil110, and the bumps 14 are formed by combining the two type half bumps 14a and 14 b, whereby the high bumps 14 can be formed with a little amountof side etching. Accordingly, the wiring substrate 11 h with the highbumps 14 can be obtained without being limited in vain as to thearrangement density.

7) Embodiment 7

FIGS. 13(A) to 13(C) show Embodiment 7 according to the presentinvention, being sectional views showing a method of manufacturing awiring substrate in order of manufacturing step. Embodiment 7 isintended to solve the limit of a pitch of a bump 14 through plural timesof lamination of members.

A. First, the partial steps of Embodiment 1, that is, the steps shown inFIGS. 1(A) to 1(F) are performed, to thereby form a connecting memberbetween wiring films 22 (FIG. 13(A)).

Then, similarly, the partial steps of Embodiment 1, that is, the stepsshown in FIGS. 1(A) to 1(C) are performed, to thereby form another firstmember 22 (FIG. 13(A)). Note that the expression “other” is added here,because the first member 17 is formed in the middle of forming theabove-described connecting member between wiring films 22 (correspondingto FIG. 1(C) from among FIGS. 1(A) to 1(F)), it is intended to clearlydescribe that a first member is formed separately therefrom(hereinafter, the same shall apply).

B. Next, both the connecting member between wiring films 22 and theother first member 32 are stacked in the positional relationship shownin FIG. 13(A). The first member 32 is laminated on the connecting memberbetween wiring films 22 such that top portions of the bumps 14 of thefirst member 32 are exposed out of a second resin film 18 of theconnecting member between wiring films 22. Thus, another second member33 is formed (FIG. 13(B)).

C. Then, the other first resin film 34 is removed from the other secondmember 33. Accordingly, a new connecting member between wiring films 31is formed in which the bumps 14 formed approximately in a cone-shape areprovided so as to be embedded in the second resin film 18 (FIG. 13(C)).

P (pitch) of the bump 14 of the new connecting member between wiringfilms 31 is 0.2 mmP, for example. The pitch of each bump 14 of theconnecting member between wiring films 22 and the first member 32, whichserve as a source, is 0.4 mmP, for example, with the result that thepitch is half.

Note that, as to the lamination direction, both the members may belaminated such that a direction of one bump is opposite with respect tothat of the adjacent bump as in a connecting member between wiring films36 shown in FIG. 14, for example. Further, the number of laminations isnot limited to one as in the connecting member between wiring films 31in Embodiment 2, and the lamination may be performed twice or threetimes. The first member 32 may have a different diameter of the bump 14from that of the connecting member between wiring films 22.

8) Embodiment 8

FIGS. 15(A) and 15(B) show Embodiment 8 according to the presentinvention, being sectional views showing a method of manufacturing awiring substrate in order of manufacturing step. According to Embodiment8, pressing is performed by one operation, thereby forming a multilayerwiring substrate 41.

A. First, each of three pieces of connecting member between wiring films46 to 48 is disposed between each of four pieces of double-sided wiringsubstrates 42 to 45, for example (FIG. 15(A)).

B. Subsequently, the above substrates and connecting members are pressedcollectively at a high temperature, thereby completing the multilayerwiring substrate 41 (FIG. 15(B)).

In this case, all of the steps of Embodiment 1 and patterning to wiringfilm forming copper foils 23 are conducted, thereby forming the fourpieces of double-sided wiring substrates 42 to 45. Whereas, the partialsteps (FIGS. 1(A) to 1(F)) of Embodiment 1 are conducted, therebyforming the three pieces of connecting member between wiring films 46 to48.

9) Embodiment 9

FIGS. 16(A) to 16(E) show Embodiment 9 according to the presentinvention, being sectional views showing a method of manufacturing awiring substrate in order of manufacturing step.

A. As shown in FIG. 16(A), a metal laminate body 90′ with a three-layerstructure is prepared. In the metal laminate body 90′ with a three-layerstructure, a wiring film forming copper foil 96 with a thickness of, forexample, 18 μm is laminated on a surface of a bump forming copper foil92 with a thickness of, for example, about 100 μm through an etchingbarrier layer 94 with a thickness of, for example, about 0.1 μm which ismade of nickel.

B. The copper foil 94 is subjected to patterning through selectiveetching (etching in which photoresist is applied, and is subjected topatterning through exposure and developing, and the patternedphotoresist is used as a mask). Further, the etching barrier layer 94 issubjected to etching with the patterned copper foil 94 as a mask.Thereafter, a resin film 98 is adhered to the surface of the metallaminate body 90′ with a three-layer structure on which the copper foil96 and the etching barrier layer 94 are formed. FIG. 16(B) shows thestate after the adhesion.

As the resin film 98, there is used a material having property in whichan adhesive force is disappeared due to heat or ultraviolet rays and inwhich resin is not transferred to other film (for example, REVALPHA(trade name) manufactured by Nitto Denko Corporation, which serves as asheet adherence of which is disappeared due to heat).

C. As shown in FIG. 16(C), the bump forming copper foil 92 is subjectedto selective etching from the rear surface (lower surface) side, tothereby form bumps 14.

D. Next, as shown in FIG. 16(D), a resin film 18 that serves as aninterlayer insulating film is laminated on the resin film 98 so as to bepenetrated with the bumps 14.

E. Then, for example, irradiation of ultraviolet rays is performed tothe resin film 98 to deprive the adhesive force, whereby the resin film98 is removed. FIG. 16(E) shows a wiring substrate 11 e that is obtainedafter the removal of the resin film 98. The wiring substrate 11 egreatly differs from the wiring substrates 11 and 11 a to 11 d in that awiring film is formed only on one of the principal surfaces.

FIGS. 17(A) and 17(B) show an example of a method of manufacturing ahigh-integrated multilayer wiring substrate through lamination of alarge number of wiring substrates 11 e described above.

A. First, as shown in FIG. 17(A), a predetermined number of wiringsubstrates 11 e are prepared, and they are overlapped with one anotherin a predetermined positional relationship.

B. Next, as shown in FIG. 17(B), the predetermined number of overlappedwiring substrates 11 e are pressed to be integrated with one another.

In this way, a large number of wiring substrates 11 e, in which a wiringfilm is formed only on one of the principal surfaces, are laminated tobe integrated with one another, whereby the high-integrated multilayerwiring substrate can also be obtained.

10) Embodiment 10

FIGS. 18(A) to 18(E) show Embodiment 10 according to the presentinvention, being sectional views showing a method of manufacturing awiring substrate in order of manufacturing step.

A. First, as shown in FIG. 18(A), there is prepared one in which awiring film forming copper foil 23 is adhered to one of principalsurfaces of an adhesive sheet 100.

B. Next, as shown in FIG. 18(B), the wiring film forming copper foil 23is subjected to patterning through, for example, photo etching, therebyforming wiring films.

C. Then, as shown in FIG. 18(C), bumps 14 a made of a conductive pastefilm are formed on the respective wiring films 23. The conductive pasteis formed by mixing powder of metal such as silver or copper, a binder,and a solvent.

D. Subsequently, as shown in FIG. 18(D), a resin film 18 that serves asan interlayer insulating film is adhered to the adhesive sheet 100 so asto be penetrated with the bumps 14 a.

E. Thereafter, the adhesive sheet 100 is removed. Thus, FIG. 18(E) showsa wiring substrate 11 f that is obtained after the removal of theadhesive sheet 100. The wiring substrate 11 f greatly differs from thewiring substrates 11 and 11 a to 11 d in that the wiring films areformed only on one of the principal surfaces, and differs from any ofthe wiring substrates 11 and 11 a to 11 e in that the bumps 14 a areformed from the conductive paste.

FIGS. 19(A) and 19(B) show an example of a method of manufacturing ahigh-integrated multilayer wiring substrate through lamination of alarge number of wiring substrates 11 f described above.

A. First, as shown in FIG. 19(A), a predetermined number of wiringsubstrates 11 f are prepared, and they are overlapped with one anotherin a predetermined positional relationship.

B. Next, as shown in FIG. 19(B), the predetermined number of overlappedwiring substrates 11 f are pressed to be integrated with one another.

In this way, a large number of wiring substrates 11 f, in which thewiring films are formed only on one of the principal surfaces and thebumps 14 a are formed from the conductive paste, are laminated to beintegrated with one another, whereby the high-integrated multilayerwiring substrate can also be obtained.

11) Embodiment 11

FIGS. 20(A) to 20(D) show Embodiment 11 according to the presentinvention, being sectional views showing a method of manufacturing amultilayer wiring substrate in order of manufacturing step. InEmbodiment 11, wiring patterns are formed on both surfaces of aconnecting member between wiring films 22 by a semi-additive process.

A. First, 3 μm thick copper foils 53 which are supported by respectivealuminum carriers 52 are laminated on both the surfaces of theconnecting member between wiring films 22, and then the pressing ofthose is conducted, to thereby achieve their integration (FIG. 20(A)).

B. The separation of the aluminum carriers 52 is conducted by etching,and the copper foils 53 laminated on both the surfaces of the connectingmember between wiring films 22 are exposed (FIG. 20(B)).

C. Next, reverse plating resists of necessary patterns (not shown) areformed. Wiring patterns 54 are formed on the surface of each of thecopper foils 53 through plating by using the copper foils 53 asconductive films, and then, the separation of the plating resists isperformed (FIG. 20(C)).

D. The copper foils 53 having a thickness of 3 μm are removed throughquick etching.

In this case, the patterns 54 are simultaneously subjected to etching,but the etched amount is small. Thus, the patterns 54 have no problem aspatterns. Accordingly, a multilayer wiring substrate 51 on both surfacesof which the wiring patterns 54 are provided is completed (FIG. 20(D)).

Note that porous polyimide resin (manufactured by Nitto Denko, forexample) may be used for a resin film 18. This is because penetratingproperty of the polyimide resin with respect to bumps 14 is satisfactorybecause of the porousity, and thus, contamination and the like are notdeveloped. In other words, in the case of ordinary resin that is notporous, the resin film 18 is difficult to be penetrated with the bumps14, and the resin film is distorted, which leads to the generation ofwaste and foreign matters which serve as a contamination source.However, when a porous resin film is used, the satisfactory penetratingproperty is provided, and thus, slight contamination develops.Incidentally, porous resin such as porous polyimide resin includesclosed-cell type and opened-cell type. The closed-cell type has atendency to exhibit the better penetrating property and produce lesscontamination and the like.

12) Embodiment 12

FIGS. 21(A) and 21(B) show Embodiment 12, being sectional views showinga method of manufacturing a multilayer wiring substrate in order ofmanufacturing step. According to Embodiment 12, bumps 14 are overlappedin a form of two stages.

A. Two pieces of connecting members between wiring films 22 are arrangedso as to be overlapped, and copper foils 23 that serve as wiring filmsare disposed above and under the two connecting members (FIG. 21A).

B. Pressing of those is performed collectively at a high temperature.Thus, a multilayer wiring substrate 61 is completed in which the bumps14 are overlapped in a form of two stages (FIG. 21B).

Originally, in the case where the bump is intended to be heightened,when the thickness of a bump forming metal layer 12 is simply increased,the diameter of a foot portion of the bump is increased due to theheightened bump even if the diameter of a top portion is not changed. Asa result, the pitch of the bump cannot be prevented from beingincreased.

However, when the method of overlapping the bumps 14 is employed as inEmbodiment 12, the height of the bump 14 is not increased, and thus, thediameter of the foot portion of the bump 14 remains small while beingnot increased. As a result, the pitch of the bump 14 can be kept small.

Incidentally, in Embodiment 12, the bumps 14 are overlapped in a form oftwo stages, but they may be overlapped in multistage.

13) Embodiment 13

FIGS. 22(A) to 22(D) show Embodiment 13 according to the presentinvention, being sectional views showing a method of manufacturing awiring substrate in order of manufacturing step.

A. As shown in FIG. 22(A), a metal laminate body 90 with a three-layerstructure is prepared. In the metal laminate body 90 with a three-layerstructure, a wiring film forming copper foil 96 with a thickness of, forexample, about 9 μm is laminated on a surface of a bump forming copperfoil 92 with a thickness of, for example, about 100 μm through anetching barrier layer 94 with a thickness of, for example, about 0.1 μmwhich is made of nickel.

B. Next, selective etching is performed to the bump forming copper foil92 of the metal laminate body 90, thereby forming bumps 14 as shown inFIG. 22(B). In this case, the etching barrier layer 94 inhibits etchingof the wiring film forming copper foil 96.

Thereafter, in order to avoid the state where the bumps 14 areelectrically connected to each other through the etching barrier layer94, the etching barrier layer 94 is selectively removed with the bumps14 serving as masks.

C. Next, a resin film 98, which serves as an interlayer insulating filmand is made of, for example, polyimide resin, thermosetting resin, orthe like, is laminated on the bump formation surface of the laminatebody 90 so as to be penetrated with the bumps 14. FIG. 22(C) shows thestate after the lamination.

D. Then, selective etching treatment is performed to the wiring filmforming copper foil 96, thereby forming the wiring film 96′. Thus, awiring substrate 11 h is obtained as shown in FIG. 22(D).

The wiring substrate 11 h is the most suitable as, for example, a bearchip or a conductor for a wafer burn-in test. FIG. 23 is a sectionalview showing the state where the wiring substrate 11 h is used as theconductor for a wafer burn-in test. In the figure, reference numeral 100denotes a semiconductor wafer, reference numeral 102 denotes I/Oelectrodes thereof, reference numeral 104 denotes a connector on thetest circuit side, and reference numeral 106 denotes terminals thereof.The wiring substrate 11 h is intervened as the conductor between theterminals 106 and the electrodes 102 of the wafer 100, and maintains theelectrical connecting state in the burn-in test.

Note that, porous polyimide resin (manufactured by Nitto Denko, forexample) may be used as the polyimide resin. This is because penetratingproperty of the polyimide resin with respect to the bumps 14 issatisfactory because of the porousity, and thus, contamination and thelike are not developed. Porous resin such as porous polyimide resinincludes closed-cell type and opened-cell type. The closed-cell type hasa tendency to exhibit the better penetrating property and produce lesscontamination and the like.

14) Embodiment 14

FIGS. 24(A) to 24(D) show Embodiment 14, showing a method ofmanufacturing a multilayer wiring substrate in order of manufacturingstep. According to Embodiment 14, there is employed a connecting memberbetween wiring films 22 in which an upper end portion and a lower endportion of each bump 14 are respectively projected from an upper surfaceand a lower surface of a second resin film 18, and two pieces oflaminate members in which a wiring film 73 is formed on one of surfacesof an insulating resin film 72 are provided on upper and lower surfacesof the member 22. Thus, the multilayer wiring substrate having wiringfilms 73 on both surfaces thereof is obtained.

A. As shown in FIG. 24(A), there is prepared a laminate member in whichthe metal foil 73, which serves as the wiring film and is made of, forexample, copper or the like, is formed on the sheet 72 (which may beinsulative or made of metal).

B. The metal foil 73 is subjected to patterning through selectiveetching, to thereby form the wiring film 73 (FIG. 24(B)). Thus, aone-sided wiring substrate 74 on which the wiring film 73 is formed ononly one of the surfaces is obtained.

C. Then, as shown in FIG. 24(C), the connecting member between wiringfilms 22 in which the upper end portion and the lower end portion ofeach bump 14 are projected from the upper surface and the lower surfaceof the second resin film 18 is, and two pieces of one-sided wiringsubstrates 74 obtained in the manner shown in FIGS. 24(A) and 24(B) areprepared. The one-sided wiring substrates 74 are faced to both surfacesof the connecting member between wiring films 22 such that the wiringfilms 73 face the member 22 side through the alignment (alignment forestablishing a predetermined positional relationship between the bumps14 and the wiring films 73 of the one-sided wiring substrates 74).

D. Next, the connecting member between wiring films 22 and the one-sidedwiring substrates 74 are integrated by the room-temperature compressionbonding or thermo-compression bonding. Then, there is obtained amultilayer wiring substrate having the wiring films 73 on both surfacesthereof, in which the surface of the wiring film 73 of each of theone-sided wiring substrates 74 and the surface of the second resin film18 are integrated to be located on the same plane, that is, in which thewiring film 73 is embedded so as to be located on the same plane as thesurface of the resin film 18. Thereafter, the sheets 72 on both upperand lower sides are separated to be removed. FIG. 24(D) shows the stateafter the separation.

The multilayer wiring substrate having the double-sided wirings, asshown in FIG. 24(D), has no unevenness on both the surfaces having thewiring films 73. That is, the multilayer wiring substrate is flat, inwhich the warping is not easily caused. A solder resist film is easilyformed, and the defect of the solder resist film is hard to begenerated. Thus, the preferable solder resist film can be formed.

Also, in the case where other wiring substrate or plural wiringsubstrates are laminated on the above multilayer wiring substrate tothereby obtain the multilayer wiring substrate having the larger numberof layers, the use of the multilayer wiring substrate with both flatsurfaces enables easy lamination. This becomes a factor for enhancingthe reliability and quality.

15) Embodiment 15

FIGS. 25(A) to 25(C) show Embodiment 15, showing a method ofmanufacturing a multilayer wiring substrate in order of manufacturingstep. According to Embodiment 15, a multilayer wiring substrate havingthrough holes is prepared as a wiring substrate to be a core component,and on both surfaces thereof, connecting members between wiring filmshaving bumps are laminated. Then, metal foils on surfaces of theconnecting members are subjected to selective etching, to thereby formwiring films.

A. As shown in FIG. 25(A), there are prepared a multilayer wiringsubstrate 75 which has through holes and which serves as a corecomponent and two pieces of connecting members between wiring films 22and two pieces of metal foils 23 that serve as wiring films which areshown in FIG. 1(G). The alignment of the connecting members betweenwiring films 22 is performed such that both surfaces of the multilayerwiring substrate 75 serving as the core component are faced thereto.Further, the metal foils 23 are faced toward the connecting membersbetween wiring films 22 from the outside thereof.

Here, description will be made of the wiring substrate 75 serving as thecore component. Reference numeral 77 denotes an insulating substrate;reference numeral 78 denotes through holes formed in the insulatingsubstrate 77; and reference numeral 79 denotes connecting wiring filmsbetween upper wiring and lower wiring, which are formed on surfaces ofthe through holes 78. For example, the wiring film 79 consists of aplated film, and can be formed by a technique known as a so-calledthrough hole forming technique or via hole forming technique.

B. The multilayer wiring substrate 75 having through holes which servesas the core component, two pieces of the connecting members betweenwiring films 22, and two pieces of the metal foils 23 that serve as thewiring films are then subjected to the room-temperature compressionbonding or thermo-compression bonding, to thereby achieve theirintegration as shown in FIG. 25(B).

C. The upper and lower metal foils 23 are subjected to photo etching,thereby forming the wiring films as shown in FIG. 25(C). Thus, afour-layer wiring substrate is completed.

According to Embodiment 15, the multilayer wiring substrate 75, which ismanufactured by the conventional general method and can sufficientlysecure the mechanical intensity, is employed as the core component, anda multilayer wiring technique that uses the connecting members betweenwiring films 22 is applied thereto, whereby the multilayer wiringsubstrate, which is thick and has high intensity, can be obtained.

According to the connecting member between wiring films of the firstaspect of the present invention, the multilayer wiring substrate can bemanufactured by employing a normal copper foil, which is ageneral-purpose component and not expensive, or the like as thematerial, and thus, the manufacturing cost can be reduced. The formationof the bumps is sufficiently achieved by conducting etching once,thereby attaining the reduction of the number of steps, the reduction ofthe kinds of etching liquid, etc. In addition, a necessary number oflayers can be laminated and pressed collectively at a time, by which thereduction of the number of steps is led.

According to the connecting member between wiring films of the secondaspect of the present invention, the insulating film for interlayerinsulation is comprised of a resin layer with a three-layer structure inwhich thermo-compression bonding resin is provided to both surfaces of acore member made of resin. Accordingly, the adherence between the wiringfilm forming metal foil and the insulating film is secured, therebybeing capable of increasing the reliability.

The method of manufacturing a connecting member between wiring films ofthe third aspect of the present invention includes:

laminating a carrier layer on a bump forming metal layer;

forming resist patterns to an opposite surface of the bump forming metallayer to the surface on which the carrier layer is laminated;

performing etching to the bump forming metal layer with the resistpatterns serving as a mask to form a first member in which a pluralityof bumps, which are formed approximately in a cone-shape, are projectedfrom the carrier layer;

laminating an insulating film on the first member so as to make topportions of the bumps be exposed from the insulating film to form asecond member; and

removing the carrier layer from the second member to form a connectingmember between wiring films in which the bumps formed approximately in acone-shape are embedded in the insulating film such that at least oneends of the bumps are projected therefrom. Thus, a connecting memberbetween wiring film can be manufactured by using the member according tothe first or second aspect of the present invention. Accordingly, thewiring substrate having wiring films on both surfaces thereof can bemanufactured by using a normal copper foil, which is not expensive as ageneral-purpose component, or the like as a material, and therefore, themanufacturing cost can also be suppressed low.

The method of manufacturing a multilayer wiring substrate of the fourthaspect of the present invention includes:

arranging copper foils that serve as wiring films above and under aconnecting member between wiring films having a plurality of bumps whichare formed approximately in a cone-shape and which are embedded in aninsulating film such that at least one ends of the bumps are projectedtherefrom; and

integrating the insulating film and the copper foils through thermalpressing. Accordingly, the wiring substrate having wiring films on bothsurfaces thereof can be manufactured by using a normal copper foil,which is not expensive as a general-purpose component, or the like as amaterial, and therefore, the manufacturing cost can also be suppressedlow.

The method of manufacturing a multilayer wiring substrate of the fifthaspect of the present invention includes:

arranging members in which a metal foil is previously attached to acarrier and predetermined patterning is conducted thereto above andunder a connecting member between wiring films having an insulating filmfor interlayer insulation and bumps; and

integrating the insulating film, the bumps, the carrier, and the metalfoil through thermal pressing. Accordingly, the wiring substrate havingwiring films on both surfaces thereof can be manufactured by using anormal copper foil, which is not expensive as a general-purposecomponent, or the like as a material, and therefore, the manufacturingcost can also be suppressed low.

The method of manufacturing a multilayer wiring substrate of the sixthaspect of the present invention includes connecting wiring films of adouble-sided wiring substrate or multilayer wiring substrate with wiringfilms of other double-sided wiring substrate or multilayer wiringsubstrate by a plurality of bumps which are formed approximately in acone-shape and which are embedded in an insulating film such that atleast one ends of the bumps are projected therefrom. Accordingly, thewiring substrate having wiring films on both surfaces thereof can bemanufactured by using a normal copper foil, which is not expensive as ageneral-purpose component, or the like as a material, and therefore, themanufacturing cost can also be suppressed low.

The method of manufacturing a multilayer wiring substrate of the seventhaspect of the present invention includes:

laminating an insulating film for interlayer insulation on one ofprincipal surfaces of a carrier which is formed with a plurality ofbumps formed approximately in a cone-shape so as to make the insulatingfilm be penetrated with the bumps;

laminating a wiring film forming metal foil on an opposite surface ofthe insulating film to the carrier;

removing the carrier; and

laminating other wiring film forming metal foil on the surface fromwhich the carrier is removed to integrate the bumps, the insulatingfilm, and the two wiring film forming metal foils. Accordingly, thewiring substrate having wiring films on both surfaces thereof can bemanufactured by using a normal copper foil, which is not expensive as ageneral-purpose component, or the like as a material, and therefore, themanufacturing cost can also be suppressed low.

Then, the lamination of the two wiring film forming metal foils areperformed by conducting different pressing processes twice, and thus,the mutual positional relationship of the bumps can be regulated by twomembers, that is, the insulating film for interlayer insulation and thecarrier to achieve integration with the wiring film forming metal foil,in the first lamination of one of the metal foils. Therefore, thedeviation of the mutual positional relationship between the bumps can bemade extremely small.

Further, the lamination with pressing of the other wiring film formingmetal foil is conducted in the state where the mutual positionalrelationship between the bumps is regulated by the wiring film formingmetal foil, and thus, the wiring substrate can be formed while highprecision on the positional relationship is maintained.

The method of manufacturing a multilayer wiring substrate of the eighthaspect of the present invention includes:

preparing a carrier which serves as an interlayer insulating film andwhich is formed with a plurality of bumps formed approximately in acone-shape on one of principal surfaces thereof;

obtaining the state where the bumps penetrate the carrier; and

laminating wiring film forming metal foils on both the surfaces of thecarrier to attain the integration. Accordingly, the wiring substratehaving wiring films on both surfaces thereof can be manufactured byusing a normal copper foil, which is not expensive as a general-purposecomponent, or the like as a material, and therefore, the manufacturingcost can also be suppressed low.

Further, the carrier is used as it is as the interlayer insulating film.Therefore, a waste of the carrier can be avoided, and further, reductionof the material cost can be attained.

According to the method of manufacturing a multilayer wiring substrateof the ninth aspect of the present invention, the wiring substratehaving wiring films on both surfaces thereof can be manufactured byusing a normal copper foil, which is not expensive as a general-purposecomponent, or the like as a material. In addition, the bumpcorresponding holes are previously formed in the insulating film forinterlayer insulation which is laminated on the member in which thebumps are formed on the wiring film forming metal foil so as tocorrespond to the bumps. Thus, in the lamination of the insulating film,the insulating film is smoothly penetrated with the bumps, and thecontamination due to foreign particle and matter which derive from theinsulating film forming material and which are generated through thepenetration can further be reduced.

According to the method of manufacturing a multilayer wiring substrateof the tenth aspect of the present invention, the wiring substratehaving wiring films on both surfaces thereof can be manufactured byusing a normal copper foil, which is not expensive as a general-purposecomponent, or the like as a material. In addition, the insulating filmfor interlayer insulation is pressed to be laminated on the wiring filmforming metal foil formed with the bumps through the mold formed withthe bump corresponding holes in the state where the bump correspondingholes and the bumps are aligned with each other. Thus, in the laminationof the insulating film, the insulating film is sharply penetrated withthe mold having the bump corresponding holes and the bumps. Accordingly,the foreign particles and matters which derive from the insulating filmforming material and which are generated through the penetration can bereduced, and therefore, the contamination can further be reduced.

According to the method of manufacturing a multilayer wiring substrateof the eleventh aspect of the present invention, in the method ofmanufacturing a multilayer wiring substrate of the tenth aspect of theinvention, the mold adhered with the resin film with adhesive by theadhesive on its opposite surface to the insulating film is used as themold formed with the bump corresponding holes, and the mold having thebump corresponding holes is removed through the adhesive by peeling theresin film. Therefore, the mold can be removed together with the foreignparticle that is generated through the penetration by removing the resinfilm. Accordingly, the foreign particles and matters can be reduced, andtherefore, the contamination can further be reduced.

According to the method of manufacturing a multilayer wiring substrateof the twelfth aspect of the present invention, the bump can beheightened without being limited in vain as to heightening of thearrangement density. That is, selective etching generally involves sideetching, and the amount of side etching is substantially proportional tothe depth of etching. Therefore, as the wiring substrate with higherbumps is to be obtained, the amount of side etching becomes larger. Inaddition, the integration density becomes lower.

However, according to the method of manufacturing a multilayer wiringsubstrate of the present inevntion, the half bumps are formed byperforming half etching from both the surfaces of the thick bump formingcopper foil (half etching at the same time or different times), and thebumps are formed by combining the two half bumps. Accordingly, the highbumps can be formed with a little amount of side etching.

According to the method of manufacturing a multilayer wiring substrateof the thirteenth aspect of the present invention, the surface of thewiring film and the surface of the insulating film that serves as thebase film can be located on the same plane through pressing forintegration. As a result, deformation such as warping is difficult to bedeveloped, and the reliability is enhanced. Accordingly, the laminationfor a large number of multilayer wiring substrates is easily performed,and thus, the multilayer lamination is performed with more ease.

According to the method of manufacturing a connecting member betweenwiring films of the fourteenth aspect of the present invention, thewiring substrate having wiring films on both surfaces thereof can bemanufactured by using a normal copper foil, which is not expensive as ageneral-purpose component, or the like as a material, and therefore, themanufacturing cost can also be suppressed low. In addition, there isobtained such an effect that the bumps can be arranged with the pitchsmaller than the limitation pitch of the etching resist pattern.

According to the method of manufacturing a multilayer wiring substrateof the fifteenth aspect of the present invention, the wiring substratehaving wiring films on both surfaces thereof can be manufactured byusing a normal copper foil, which is not expensive as a general-purposecomponent, or the like as a material, and therefore, the manufacturingcost can also be suppressed low. In addition, there is obtained such aneffect that the fine wiring patterns, which are characteristic of thesemi-additive process, can be formed on both sides of the insulatingfilm.

According to the connecting member between wiring films of the sixteenthaspect of the present invention, there is obtained such an effect thatthe fine pitch can be maintained even when the bump is heightened.

1. A method of manufacturing a multilayer wiring substrate, comprising:preparing a member in which a plurality of bumps are formed on one ofprincipal surfaces of a mold and other member in which other mold islaminated on one of principal surfaces of an insulating film forinterlayer insulation and bump corresponding holes are formed on theother mold so as to correspond to the bumps; facing the insulating filmof the other member toward the surface of the member formed with thebumps on the side on which the bumps are formed so as to align the bumpcorresponding holes and the corresponding bumps with each other inposition; pressing the two molds so as to make the insulating film bepenetrated with the bumps; and removing the two molds and thenlaminating wiring film forming metal foils on both the surfaces of theinsulating film to integrate the insulating film, the bumps, and the twowiring film forming metal foils.
 2. A method of manufacturing amultilayer wiring substrate according to claim 1, wherein: the moldadhered with a resin film with adhesive on its opposite surface to theinsulating film is used as the mold formed with the bump correspondingholes; and a pressing force is applied to the two molds so as to makethe insulating film be penetrated with the bumps, and then, in removingthe two molds, the mold having the bump corresponding holes is removedthrough the adhesive by peeling the resin film.
 3. A method ofmanufacturing a multilayer wiring substrate, comprising: performing halfetching from one of principal surfaces of a bump forming metal foil toform a plurality of half bumps; laminating an insulating film forinterlayer insulation on the one of principal surfaces of the bumpforming metal foil so as to make the insulating film be penetrated withthe half bumps; laminating a wiring film forming metal layer connectedwith the half bumps on a surface of the insulating film; performing halfetching from the other principal surface of the bump forming metal foilto form other half bumps that are integrated with the half bumps toconstitute bumps; laminating other insulating film for interlayerinsulation on the other principal surface of the bump forming metal foilso as to make the other insulating film be penetrated with the otherhalf bumps; and laminating other wiring film forming metal foilconnected with the other half bumps on a surface of the other insulatingfilm.
 4. A method of manufacturing a connecting member between wiringfilms, comprising: laminating a carrier layer on a bump forming metalfoil; forming resist patterns to an opposite surface of the bump formingmetal foil to the surface on which the carrier layer is laminated;conducting etching to the bump forming metal foil with the resistpatterns serving as a mask to form a first member in which a pluralityof bumps, which are formed approximately in a cone-shape, are projectedfrom the carrier layer; laminating an insulating film on the firstmember so as to make top portions of the bumps be exposed from theinsulating film to form a second member; removing the carrier layer fromthe second member to form a connecting member between wiring films;laminating other carrier layer different from the carrier layer on otherbump forming metal layer different from the bump forming metal layer;forming other resist patterns different from the resist patterns to anopposite surface of the other bump forming metal foil to the surface onwhich the other carrier layer is laminated; conducting etching to theother bump forming metal foil with the other resist patterns serving asa mask to form other first member in which a plurality of bumps, whichare formed approximately in a cone-shape, are projected from the othercarrier layer; laminating the other first member and the connectingmember between wiring films so as to make top portions of the bumps ofthe other first member be exposed from the insulating film of theconnecting member between wiring films to form other second memberdifferent from the second member; and removing the other carrier layerfrom the other second member to form a new connecting member betweenwiring films in which bumps formed approximately in a cone-shape areembedded in an insulating film.